型号:

QEC121

RoHS:无铅 / 符合
制造商:Fairchild Optoelectronics Group描述:LED IR EMITTING ALGAAS 880NM 3MM
详细参数
数值
产品分类 光电元件 >> 红外发射极
QEC121 PDF
标准包装 250
系列 QEC12x
电流 - DC 正向(If) 50mA
辐射强度(le)最小值@正向电流 14mW/sr @ 100mA
波长 880nm
正向电压 1.7V
视角 16°
方向 顶视图
安装类型 通孔
封装/外壳 T-1
包装 -
相关参数
P51-300-A-N-MD-4.5OV SSI Technologies Inc SENSOR 300PSI 1.2-20UNF-2A 4.5V
ASE-30.000MHZ-ET Abracon Corporation OSC 30.000 MHZ 3.3V SMT
QEB421TR Fairchild Optoelectronics Group LED IR EMITTING 880NM 2-PLCC T/R
P51-200-A-N-MD-4.5OV SSI Technologies Inc SENSOR 200PSI 1.2-20UNF-2A 4.5V
SI3483CDV-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 30V 6-TSOP
QEB421 Fairchild Optoelectronics Group LED IR EMITTING 880NM 2PLCC
P51-100-A-N-MD-4.5OV SSI Technologies Inc SENSOR 100PSI 1.2-20UNF-2A 4.5V
ASE-30.000MHZ-ET Abracon Corporation OSC 30.000 MHZ 3.3V SMT
QEB373YR Fairchild Optoelectronics Group LED IR EMITTING 940NM 2MM YK T/R
P51-75-A-N-MD-4.5OV SSI Technologies Inc SENSOR 75PSI 1.2-20UNF-2A 4.5V
IRF9335TRPBF International Rectifier MOSFET P-CH 30V 5.4A 8-SOIC
LED56F Fairchild Optoelectronics Group DIODE EMITTING GAAS IRED TO-46
P51-50-A-N-MD-4.5OV SSI Technologies Inc SENSOR 50PSI 1.2-20UNF-2A 4.5V
LED55CF Fairchild Optoelectronics Group DIODE EMITTING GAAS IRED TO-46
ASE-30.000MHZ-ET Abracon Corporation OSC 30.000 MHZ 3.3V SMT
P51-15-A-N-MD-4.5OV SSI Technologies Inc SENSOR 15PSI 1.2-20UNF-2A 4.5V
IRF9335TRPBF International Rectifier MOSFET P-CH 30V 5.4A 8-SOIC
CQX17 Fairchild Optoelectronics Group DIODE IR EMITTING GAAS TO-46
P51-3000-A-N-D-4.5OV SSI Technologies Inc SENSOR 3000PSI 1.2-20UNF-2A 4.5V
ASE-25.000MHZ-ET Abracon Corporation OSC 25.000 MHZ 3.3V SMT